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Lontoo Soturi auringonpolttama transistori laturissa haitallinen uutiset Konflikti

20 Pcs IRF3205 IR MOSFET N-channel JFET 55V110A | Ubuy Finland
20 Pcs IRF3205 IR MOSFET N-channel JFET 55V110A | Ubuy Finland

PNP-Transistori 250V 50mA 1,8W> 60MHz hFE=50, TO-126 / BF470 - Triopak Oy
PNP-Transistori 250V 50mA 1,8W> 60MHz hFE=50, TO-126 / BF470 - Triopak Oy

PNP transistori 60V 0,6A 0,8W, - Kouluelektroniikka Oy
PNP transistori 60V 0,6A 0,8W, - Kouluelektroniikka Oy

NPN-transistori 2N3904 TO-92 | ihmevekotin.fi
NPN-transistori 2N3904 TO-92 | ihmevekotin.fi

Lämpötila-anturi TMP36 TO-92 | ihmevekotin.fi
Lämpötila-anturi TMP36 TO-92 | ihmevekotin.fi

NPN Darlington Transistori TO-202 50V 0,5A Hfe 10000-60000 6,25W 75MHz / NTE265 - Triopak Oy
NPN Darlington Transistori TO-202 50V 0,5A Hfe 10000-60000 6,25W 75MHz / NTE265 - Triopak Oy

Electrostatically Controllable Channel Thickness and Tunable Low-Frequency Noise Characteristics of Double-Gated Multilayer MoS2 Field-Effect Transistors with h-BN Dielectric | ACS Applied Materials & Interfaces
Electrostatically Controllable Channel Thickness and Tunable Low-Frequency Noise Characteristics of Double-Gated Multilayer MoS2 Field-Effect Transistors with h-BN Dielectric | ACS Applied Materials & Interfaces

LUCAS ELECTRICAL LRA02167 Laturi 14V, 150A LRA02167: Tilaa nyt!
LUCAS ELECTRICAL LRA02167 Laturi 14V, 150A LRA02167: Tilaa nyt!

Einhell BT-BC 10 E laturin korjaus
Einhell BT-BC 10 E laturin korjaus

Electrical properties of the device (A) band alignment with different... | Download Scientific Diagram
Electrical properties of the device (A) band alignment with different... | Download Scientific Diagram

Sensors | Free Full-Text | Non-Carbon 2D Materials-Based Field-Effect Transistor Biosensors: Recent Advances, Challenges, and Future Perspectives
Sensors | Free Full-Text | Non-Carbon 2D Materials-Based Field-Effect Transistor Biosensors: Recent Advances, Challenges, and Future Perspectives

P-kanava teho MOSFET 60V / 25A TO220 | ihmevekotin.fi
P-kanava teho MOSFET 60V / 25A TO220 | ihmevekotin.fi

VEVOR 3000W 12V matalataajuinen puhdas siniaaltovirtainvertteri 230V 3Kw nimellisteholla 9kw huippu ja AC laturin LCD-näyttö | VEVOR FIN
VEVOR 3000W 12V matalataajuinen puhdas siniaaltovirtainvertteri 230V 3Kw nimellisteholla 9kw huippu ja AC laturin LCD-näyttö | VEVOR FIN

MJL21194G | onsemi Tehotransistori, NPN, 250V, TO-264 | Elfa Distrelec Suomi
MJL21194G | onsemi Tehotransistori, NPN, 250V, TO-264 | Elfa Distrelec Suomi

Impact of device scaling on the electrical properties of MoS2 field-effect transistors | Scientific Reports
Impact of device scaling on the electrical properties of MoS2 field-effect transistors | Scientific Reports

872901098, Sony Transistor 2SA1492M-0PY | EET
872901098, Sony Transistor 2SA1492M-0PY | EET

NPN-Transistori VHF/UHF 675MHz TO-72 / BF180 - Triopak Oy
NPN-Transistori VHF/UHF 675MHz TO-72 / BF180 - Triopak Oy

VEVOR 3000W 12V matalataajuinen puhdas siniaaltovirtainvertteri 230V 3Kw nimellisteholla 9kw huippu ja AC laturin LCD-näyttö | VEVOR FIN
VEVOR 3000W 12V matalataajuinen puhdas siniaaltovirtainvertteri 230V 3Kw nimellisteholla 9kw huippu ja AC laturin LCD-näyttö | VEVOR FIN

Multifunctional Half-Floating-Gate Field-Effect Transistor Based on MoS2–BN–Graphene van der Waals Heterostructures | Nano Letters
Multifunctional Half-Floating-Gate Field-Effect Transistor Based on MoS2–BN–Graphene van der Waals Heterostructures | Nano Letters

PNP-transistori 2N3906 TO-92 | ihmevekotin.fi
PNP-transistori 2N3906 TO-92 | ihmevekotin.fi

NPN-TEHOTRANSISTORI 140V 20A 250W TO3 - PARTCO
NPN-TEHOTRANSISTORI 140V 20A 250W TO3 - PARTCO

PDF) Cold-source paradigm for steep-slope transistors based on van der Waals heterojunctions
PDF) Cold-source paradigm for steep-slope transistors based on van der Waals heterojunctions

NPN-Transistori 250V 0,1A 0,8W 90MHz TO-92 / BF258 - Triopak Oy
NPN-Transistori 250V 0,1A 0,8W 90MHz TO-92 / BF258 - Triopak Oy

Multifunctional Half-Floating-Gate Field-Effect Transistor Based on MoS2–BN–Graphene van der Waals Heterostructures | Nano Letters
Multifunctional Half-Floating-Gate Field-Effect Transistor Based on MoS2–BN–Graphene van der Waals Heterostructures | Nano Letters

Environmentally Stable and Reconfigurable Ultralow-Power Two-Dimensional Tellurene Synaptic Transistor for Neuromorphic Edge Computing | ACS Applied Materials & Interfaces
Environmentally Stable and Reconfigurable Ultralow-Power Two-Dimensional Tellurene Synaptic Transistor for Neuromorphic Edge Computing | ACS Applied Materials & Interfaces